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NTE Electronics NTE312 N-Channel Silicon Junction Field Effect Transistor, TO92 Type Package

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Product Information

  • High Power Gain: 10dB Min at 400MHz.
  • High Trans conductance: 4000 mho Min at 400MHz. Weight :0.2600 Pounds
  • Drain and Gate Leads Separated for High Maximum Stable Gain
  • Cross−Modulation Minimized by Square−Law Transfer Characteristic
  • For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment

Attributes

Part Number
NTE312
Label
NTE Electronics, Inc.
Number Of Items
1
Publisher
NTE Electronics, Inc.
Studio
NTE Electronics, Inc.
Lang
en-US

Product Identifiers

AIDAlgopix unique identifier
AIDGT7SE6001
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