Product Description
Silicon Wafer Specification
Size: 12inch ;
Method：CZ;
Type: P-Type ;
Thickness: 775um±25 ;
Orientation: 100 ;
Resistivity: 1~100Ω ;
Notch;
TTV: ≦10um;
Bow: ≦40um;
Warp: ≦40um
Particle: 0.3<20;
Front side: polished ;
Backside: polished ;
Package: Wafer case ;
*We can provide small quantities, special specifications products, and customized services.
*Our products include 1-12 inch silicon wafers (dummy, test, prime grade), SiC, GaN, GaAs, InP, LiNbO3, LiTaO3, Sapphire and Quartz substrates, etc.
*As a customization service, we can also process silicon wafer Oxide Layers, nitride film, metal film, EPI, custom ultra-thick, ultra-flat, single-sided / double-sided polishing, thinning, dicing service, etc.
Size: 12inch ;
Method：CZ;
Type: P-Type ;
Thickness: 775um±25 ;
Orientation: 100 ;
Resistivity: 1~100Ω ;
Notch;
TTV: ≦10um;
Bow: ≦40um;
Warp: ≦40um
Particle: 0.3<20;
Front side: polished ;
Backside: polished ;
Package: Wafer case ;
*We can provide small quantities, special specifications products, and customized services.
*Our products include 1-12 inch silicon wafers (dummy, test, prime grade), SiC, GaN, GaAs, InP, LiNbO3, LiTaO3, Sapphire and Quartz substrates, etc.
*As a customization service, we can also process silicon wafer Oxide Layers, nitride film, metal film, EPI, custom ultra-thick, ultra-flat, single-sided / double-sided polishing, thinning, dicing service, etc.
Product Information
- Method: CZ ; Size: 12inch ; Test Grade ;
- Type: P-Type ; Dopant: B ; Orientation: 100 ;
- Resistivity: 1~100Ω・cm ; Thickness: 775um±25 ; Particles: 0.3<20;
- TTV: ≦10um; Bow/Warp: ≦40um; Surface: Double side polished;
- [Sokatec] High quality silicon wafer. Customized products available.
